Tokyo – Renesas Technology Corp. has developed a new SRAM memory cell structure that combines SRAM and DRAM technologies. The device is about half the size of a conventional SRAM cell, but still has ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...
RAM, i.e., “random access memory,” is a commonly interchanged term for “volatile memory,” i.e., memory that loses its stored data when power is removed. Yet RAM is not an acronym with which I'm ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of ...
NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...
Engineers can now turbocharge their designs without having to sacrifice DRAM's high bit density to run at near-SRAM speeds. For applications where performance is of primary importance, designers have ...
What just happened? A Californian company is launching what it calls a ground-breaking solution for increasing DRAM chip density with 3D stacking technology. The new memory chips will greatly improve ...
VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...
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