(Nanowerk Spotlight) Doping, which can provide charge carriers to semiconductors, is an essential technology for semiconductors and devices, and it can be classified as n- and p-doping depending on ...

A simple one-step process that produces both n-type and p-type doping of large-area graphene surfaces could facilitate use of the promising material for future electronic devices. The doping technique ...

Scientists at Germany’s Fraunhofer Institute for Solar Energy Systems (ISE) have investigated gallium-doping in p-type silicon wafers as a route to better performance. Testing these specially produced ...

French scientists have studied the fabrication of silicon heterojunction cells with p-type wafers. With the adoption of gallium doping, the p-type products could come close to matching the performance ...

This high performance is enabled by p-type doping through nitric oxide (NO) treatment at 100 °C for 30 minutes. Furthermore, we scaled the channel length down to 50 nm, integrated a high-κ gate ...

The carrier concentration and conductivity in p-type monovalent copper semiconductors can be significantly enhanced by adding alkali metal impurities. Doping with isovalent and larger-sized alkali ...

What is the Need for Doping in Graphene Research? Graphene, a novel material for the field of electronics devices, is particularly well-suited for investigating the unique electronic property in ...