Devices match electrical performance of devices fabricated at standard thermal budget (>1000 °C), removing a barrier to large ...

CEA-Leti has announced a major advance in semiconductor manufacturing, successfully fabricating fully functional 2.5 V SOI ...

MIT’s prototype points to a future where chips move data millimeters less and save orders of magnitude more energy.

For decades, chipmakers have squeezed more computing power out of silicon by shrinking transistors, but that strategy is ...

This FAQ will look at a lesser-known but commercially available RAM technology called resistive random-access memory (RRAM) or ReRAM.

With copper interconnects facing limitations amid growing AI data workloads, silicon photonics – using light to transmit data - is developing rapidly to support the ultra-high bandwidth, low latency, ...

MIT researchers developed a new fabrication method that could enable them to stack multiple active components, like transistors and memory units, on top of an existing circuit, which would improve the ...

The success of the team – a partnership between researchers at Peking University, the Songshan Lake Materials Laboratory in ...

Imec demonstrates wafer-scale fabrication of solid-state nanopores using EUV lithography, paving the way for scalable ...

Paper detailing this breakthrough to be published by the Institute of Electrical and Electronics Engineers (IEEE) as part of a project under the National ...

CEA-Leti has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400 °C. The devices match electrical performance of devices fabricated ...