Devices match electrical performance of devices fabricated at standard thermal budget (>1000 °C), removing a barrier to large ...

CEA-Leti has announced a major advance in semiconductor manufacturing, successfully fabricating fully functional 2.5 V SOI ...

As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials engineering provide a sustainable path forward. The demands of AI and edge computing ...

For decades, chipmakers have squeezed more computing power out of silicon by shrinking transistors, but that strategy is ...

At the 2025 IEEE International Electron Devices Meeting (IEDM), research centre Imec is presenting breakthrough performance of p-type FETs with monolayer WSe 2 channels, and improved fab-compatible ...

A sub-class of Si spin qubits uses metal-oxide-semiconductor (MOS) quantum dots to confine the electrons, a structure that ...

Deep vertical holes and re-entrant features challenge the best metrology methods.

Paper detailing this breakthrough to be published by the Institute of Electrical and Electronics Engineers (IEEE) as part of a project under the National ...

CEA-Leti has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated ...

Read our detailed initial review of the Sony A7 V, an enthusiast-focused full-frame mirrrorless camera that promises major ...

Learn how Logic-gated DARPins work to activate T cells selectively in solid tumours, enhancing therapeutic outcomes.

Researchers from McMaster University and the University of Pittsburgh have created the first functionally complete logic gate—a NAND gate (short for "NOT AND")—in a soft material using only beams of ...