Abstract: The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can ...
Abstract: Total ionizing dose (TID) effects in 3-D NAND flash memories with replacement gate (RG) technology are evaluated. Threshold voltage shifts and bit error ...
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