The road to creating a blue LED was long and rough, but in 1993, it burst onto the scene. Learn about the struggles and ...
Vertical GaN power devices could benefit from better p-type contacts, realised by magnesium implantation and ultra-high-pressure annealing Engineers from North Carolina State University, Adroit ...
Abstract: The P-i-N diode is as important as insulated gate bipolar translators in power electronic devices, and its junction temperature is a significant indicator when evaluating the reliability of ...
Abstract: Vertical gallium nitride (GaN) power devices require effective edge termination for mitigating peak electric fields to achieve high breakdown voltages. The edge termination region, depending ...
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