Twisted graphene heterostructures detect temperature with 99% accuracy, reduce thermal image errors by 46%, and execute logic ...
Morning Overview on MSN
MIT finds a new way to pack more transistors on a chip
For decades, chipmakers have squeezed more computing power out of silicon by shrinking transistors, but that strategy is ...
Devices match electrical performance of devices fabricated at standard thermal budget (>1000 °C), removing a barrier to large ...
CEA-Leti has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated ...
Partially stacked sensors are essentially conventional BSI chips with more complex readout circuitry around the edge (the ...
Traditional CMOS chips are fabricated by applying and then etching repeated layers of different materials, applied to a wafer ...
CEA-Leti has announced a major advance in semiconductor manufacturing, successfully fabricating fully functional 2.5 V SOI ...
At the 2025 IEEE International Electron Devices Meeting (IEDM), research centre Imec is presenting breakthrough performance of p-type FETs with monolayer WSe 2 channels, and improved fab-compatible ...
Energy-efficient and high-performance electronic devices lead to exploring alternatives to traditional CMOS circuits. Memristor-based logic gates, such as basic gates (NOT, AND, OR), universal gates ...
As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials engineering provide a sustainable path forward. The demands of AI and edge computing ...
Abstract: Resistively switching, non-volatile memory devices facilitate new logic paradigms by combining storage and processing elements. Several non-stateful concepts such as Scouting or Majority ...
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